Investigation on parallel operations of IGBTs

The investigation of electrical characteristics including the steady-state, small signal and transient analyses for insulated-gate bipolar transistors (IGBTs) used in parallel operation are described in this paper. An algorithm to extract device parameters of the IGBTs for Saber circuit simulator is proposed. Instead of matching the data points on the curves, the algorithm was developed to match the features of I-V characteristic curves, and a great amount of computational effort can be saved. The thermal behaviours were also studied when IGBTs operated at the room temperature or at a higher operating temperature.