The growth process and field emission characteristics of globe-like polycrystalline diamond films

Diamond film as cold cathode material has unique properties, especially high bonding force with substrate and resistance to ion-bombardment. We had reported that the stable turn-on field of globe-like microcrystalline diamond aggregates films grown on titanium coated ceramic substrates by microwave plasma chemical vapor deposition (MPCVD) was 1.27V/µm and the current density reached 7.2mA/cm² at the electric fields of 2.55V/µm[1]. In this paper, the growth process and field-emission(FE) characteristics of globe-like polycrystalline diamond films grown on titanium coated Si substrates were studied.