High voltage GaAs rectifiers for high frequency, high power density switching applications

The development and reliability studies of high voltage, high efficiency GaAs Merged p-n/Schottky (MPS) rectifiers are reported. These devices exhibit extremely low switching losses, along with DC breakdown voltage of 500-1000 V, and average rectified forward current of 8-10 A, at on-state voltage of -2 volts. The rated DC avalanche breakdown voltage is >90% of the ideal (theoretical) value. Results on the optimization of the device performance using two dimensional device simulations (TMA MEDICI) and Design of Experiments (DOE) methodology are reviewed. Implementation of these devices in high frequency switching systems are also discussed.