Control of plasma and surface conditions for low defect density a-Si:H at high growth rates

The important processes in the radio frequency plasma enhanced decomposition of silane for preparation of hydrogenated amorphous silicon (a-Si:H) are discussed. The conditions necessary for obtaining low defect density material is discussed in terms of the gas phase species and their surface reactions. The problems occurring when attempting to increase the growth rate are discussed from the viewpoint of plasma chemistry and its effect on the surface reactions. Thereby, conditions necessary for obtaining low defect density material at high growth rates are identified.