Corner effects in SOI-tri gate FinFET structure by using 3D process and device simulations

SOI FinFET transistors have emerged as novel devices having superior controls over short channel effects (SCE) than the conventional MOS transistor devices. However despite these advantages, these also exhibit certain other undesirable characteristics such as corner effects, quantum effects, tunneling etc. Usually, the corner effect deteriorates the performance by increasing the leakage current. In this work, the corner effect of Tri-gate FinFETs are investigated by 3D Process and device simulation and their electrical characteristics are compared for different body doping and bias conditions. It has been observed that the corner effect in small size SOI tri gated FinFETs for typical device parameters do not deteriorate the performance. An enhancement in the on state current and sub-threshold performance have been observed.