1.3µm InAs quantum dots grown on silicon substrate

The self-assembled InAs quantum dots (QDs) on Si substrate with high density (7.5×10¹⁰ cm^-2) were achieved using relatively lower growth temperature by low-pressure metal-organic chemical vapor deposition. The PL spectra exhibit 1.3μm emission from InAs quantum dots at room temperature. PL measurements at 77K, Full Width at Half-Maximum (FWHM) is about 60meV.