Modeling of InGaN PIN solar cells with defect traps and polarization interface charges

Based on Crosslight APSYS, we have studied InGaN PIN solar cells with the effects of defect traps and piezoelectric polarization interface charges. The defect traps and the piezoelectric polarization interface charges both show adverse influences to the cell performance and high interface charge density deteriorates the fill factor dramatically. The results indicate that piezoelectric polarization interface charges also need to be taken into consideration for analyzing and understanding the experimental results for the InGaN solar cells.