High-isolation low-loss SP7T pHEMT switch suitable for antenna switch modules

In this paper the design, fabrication and measurement of a high performance SP7T GaAs pHEMT switch for cellular phone applications is discussed. The antenna switch design uses a state of the art E/D-mode pHEMT process with an Ron*Coff Figure of Merit of 145 Ohm-fF. Excellent broadband insertion loss measurements across all cellular bands are less than 0.5dB, isolations are greater than 32dB while maintaining minimum harmonic distortion levels. Matching the switch to specific bands yielded insertion losses of 0.35dB at 0.915 GHz and 0.4dB at 1.95 GHz.