A compact S Band 100W integrated gallium nitride multistage power amplifier

Compact S Band (2.2GHz to 2.8GHz and 2.8GHz to 3.2GHz) two stage power amplifiers are demonstrated using gallium nitride and gallium arsenide semiconductor technologies. The amplifier provides 83W to 105W of peak output power with peak power added efficiency of 42% to 51% over a 24% bandwidth. Small signal gain is 21dB to 24dB over this frequency band. The circuit design integrates matching networks and bias decoupling networks into a very compact 8mm by 8mm package. Additionally, the overall application board space is also a very compact 40mm by 25mm.