A 2.4GHz high efficient monolithic Class E power amplifier

This paper presents a 2.4GHz monolithic Class E power amplifier based on Grace 0.18um SiGe BiCMOS technology. It has a two-stage structure and adopts small DC feed inductors and on-chip matching networks. Without any off-chip components, the power amplifier achieves maximum output power of 22.4dBm, and the PAE is 33% with 2V supply. After optimizing the component parameter, the input and output terminals are both well matched to baseband and antenna respectively. With EER or ET technology this switch-mode amplifier can realize linear amplification, resulting in impressive high efficient in future communication system.