The shorted anode BRT: a MOS-thyristor structure with improved turn-off performance

This paper analyzes the static and dynamic electrical characteristics of BRT devices fabricated on homogeneous wafers, including a shorted anode structure. The use of homogeneous substrates allows the implementation of a direct path between the N-drift region and the anode electrode. This allows a reduction of the transient losses and the turnoff time. The operation mode, the electrical characteristics and the switching behaviour of BRT devices with shorted have been analysed by means of 2D numerical simulations. The reduction of the transient losses has been corroborated experimentally by performing switching tests under resistive load.