A pressure sensor based on a HBAR micromachined structure

In this work, we propose a pressure sensor fabricated on compound LiNbO
₃
/Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO
₃
/silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.