Polarization-engineered N-face III–V nitride quantum well LEDs

In conclusion, we report the successful realization of N-face polarization-doped QW UV LEDs. Electroluminescence from AlGaN regions indicates that AlχGai.χN QWs and AlyGaι.yN barriers can now be used to obtain respectable emission intensities for deeper UV or higher energy photons. A number of advantages of N-face optoelectronic devices p-type polarization doping, and better electron and hole injection facilitated by the correct orientation of the polarization field were pointed out.