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Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops | IEEE Journals & Magazine | IEEE Xplore

Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops


Abstract:

A proprietary Monte-Carlo simulation code dedicated to heavy ion cross-section prediction has been developed. The code is based on diffusion-collection equations, takes i...Show More

Abstract:

A proprietary Monte-Carlo simulation code dedicated to heavy ion cross-section prediction has been developed. The code is based on diffusion-collection equations, takes into account recombination processes, uses an improved drain strike model, and includes new upset analysis algorithms for different circuit architectures. Simulated cross-sections are compared to heavy ion experimental characterizations for commercial bulk 65-nm single- and dual-port SRAMs. Simulation capabilities of much more complex circuits are demonstrated considering a 65-nm radiation-hardened-by-design (RHBD) Flip-Flop (FF).
Published in: IEEE Transactions on Nuclear Science ( Volume: 57, Issue: 4, August 2010)
Page(s): 1876 - 1883
Date of Publication: 16 August 2010

ISSN Information:


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