Abstract:
A proprietary Monte-Carlo simulation code dedicated to heavy ion cross-section prediction has been developed. The code is based on diffusion-collection equations, takes i...Show MoreMetadata
Abstract:
A proprietary Monte-Carlo simulation code dedicated to heavy ion cross-section prediction has been developed. The code is based on diffusion-collection equations, takes into account recombination processes, uses an improved drain strike model, and includes new upset analysis algorithms for different circuit architectures. Simulated cross-sections are compared to heavy ion experimental characterizations for commercial bulk 65-nm single- and dual-port SRAMs. Simulation capabilities of much more complex circuits are demonstrated considering a 65-nm radiation-hardened-by-design (RHBD) Flip-Flop (FF).
Published in: IEEE Transactions on Nuclear Science ( Volume: 57, Issue: 4, August 2010)