Large current capability 270V lateral IGBT with multi-emitter

We have developed a lateral multi-emitter channel IGBT that has large current capability for plasma display panel (PDP) scan driver ICs. By introducing a hole barrier layer that supports uniform action of each channel, a low on state voltage drop of 1.8 V at a large current density of 760 A/cm² and large saturation current density over 4000A/cm² at blocking voltage of 270 V were achieved in a 0.25 μm 8-inch SOI isolation process. The multi-emitter structure also improves chip area efficiency by using a narrow IGBT cell width and short circuit capability.