Experimental study on current collapse of GaN MOSFETs, HEMTs and MOS-HEMTs

We report on the experimental results of current collapse measurements, using both conventional pulse method and a new DC method, performed on GaN MOSFETs, HEMTs and MOS-HEMTs. The current collapse phenomena were measured and compared between the different device types, epilayer dopings, RESURF region lengths and MOS channel lengths, at both room temperature and elevated temperatures.