Experimental observation of Coulomb staircase in asymmetric tunnel barrier system

The advantages of single electron devices with asymmetrical tunnel barriers (ATBs), proposed by the authors, over conventional single electron devices with symmetrical tunnel barriers (STBs) are discussed by referring to the features of ATBs and the results of computer simulation of the performance of tunnel-junction-load SET logic and turnstile devices. Experimental observation of a Coulomb staircase and asymmetrical tunnel characteristics in ATBs fabricated with GaAs/AlGaAs heterostructures are also reported.