Characterization of transient behavior and failure mechanism of polysilicon-bound diode under CDM-like very-fast transmission line pulsing

Transient behaviors of poly-bound diode subject to fast ESD events such as the Charged Device Model (CDM) are characterized using pulses generated by the very-fast transmission line pulsing (VFTLP) tester. The effects of changing diode's dimension parameters on the overshoot voltage and turn-on time are studied. The correlation between the poly-bound diode failure and poly-gate configuration under the VFTLP stress is also investigated.