Characterization of oxide traps by RTN measurement in MOSFETs and memory devices

Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new method for extracting both locations (xT, yT) and energy level (ECox - ET) of oxide traps.