Modeling of local reduction in TiSi/sub 2/ and CoSi/sub 2/ growth near spacers in MOS technologies: influence of mechanical stress and main diffusing species

This paper presents an improved model for the simulation of silicide growth by either silicon or metal diffusion. For the first time, the shape of TiSi/sub 2/ and CoSi/sub 2/ layers, especially near spacer edges and on top of polysilicon lines, has been accurately simulated using mechanical stress effects. Furthermore, the importance of correctly simulating the silicidation to obtain accurate contact resistances is shown.