Improvement of leakage-current-related yield of SOI MOSFETs using nitrogen ion-implantation to the source and drain regions

SOI MOSFETs are candidates for low-power and low-voltage devices for portable systems used in the upcoming multimedia era because junction capacitances and back-gate-bias effect can be reduced compared to conventional devices on bulk Si. Thus far, many features have been reported for SOI MOSFETs, and SOI devices are now under the stage of development for practical usage. An important problem that should be resolved at present is suppression of leakage current which is mainly related to parasitic edge transistors and is accidentally arisen with very low probability. In the present report, we propose a method to eliminate the leakage current by implanting nitrogen ion to the source and drain (S/D) regions.