Impact of supplemental Si implantation into SIMOX buried oxide

It is well known that SIMOX buried oxide (BOX) is unlike thermal oxide. The onset for the high-field conduction regime has been observed to occur at a much lower E-field than the standard onset for thermal oxide. Experimental results have suggested that the early onset of top Si cathode injection is due to BOX non-stoichiometry. However, the nature of this non-stoichiometry has, so far, not been clearly defined. In this abstract, the nature of excess Si in SIMOX BOX and its impact on BOX conduction mechanisms will be examined using supplemental Si implantation and post-implant annealing.