Gate oxide integrity on ITOX-SIMOX wafers

The Gate-Oxide-Integrity (GOI) on Thin-Film-Silicon-On-Insulator (TFSOI) wafers is required to be the same as that on bulk silicon wafers in a commercial stage of LSIs using SOI CMOS technology. However, the GOI on TFSOI wafers, especially charge-to-breakdown characteristics, has been reported to be inferior to that on bulk wafers. In this paper, the GOI on ITOX (Internal-Thermal-OXide)-SIMOX wafers fabricated by the low-dose implanting and High-Temperature-Oxidation (HTO) technique is investigated, revealing that ITOX-SIMOX wafers have GOI comparable to that on bulk wafers. The influence of device structures, particularly of total gate edge length, on the GOI is also discussed.