Frequency dispersion in partially depleted SOI MOSFET output resistance

Floating body effect (FBE) in partially depleted SOI MOSFET has become the focus of research recently. So far, most researcher concentrated their study on switching type circuit operation. However, in order to quantify the impact of floating body on analog circuit, small signal characteristic in frequency domain should be investigated. This paper reports an enhancement of output resistance (R/sub out/) at high frequency in partially depleted devices. The effect is explained by the floating body potential fluctuation under the influence of hole accumulation in the neutral body and gate coupling. At high current level, self heating effect overrides FBE and decreases R/sub out/ at high frequency.