Characterization of low dose SIMOX for low power electronics

Summary form only given. In this work we focus on the characterization of the low dose SIMOX from the designed experiment. In this experiment the <100> oriented, p-type silicon wafers were implanted with the range of doses from 0.3E18 cm/sup 2/ to 0.6E18 cm/sup 2/ at the energy 190 keV, 200 keV and 210 keV and annealed for 6 hours at 1350/spl deg/C in 1%O/sub 2/ in N/sub 2/. Nondestructive characterization was performed using spectroscopic ellipsometry, optical reflectometry and TXRF. The structure of thin film layers was analyzed with high resolution SEM, dislocation density was determined by the enhanced Secco etch, and buried oxide integrity was examined by the measurements of I/V and C/V characteristics with the mercury probe analyzer.