Characterization of high-frequency noise performance of GaN double heterojunction HEMT

A systematic GaN single heterojucntion HEMT (SH-HEMT) physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The high frequency noise performance of AlGaN/GaN/AlGaN double heterojuction HEMT (DH-HEMT) is studied based on the established SH-HEMT model. The results show that, because of the enhancement of carrier confinement in DH-HEMT, better high frequency noise performance can be achieved.