Non-quasi-static SOI MOSFET model dedicated for analog circuit design

A one-dimensional CAD-oriented SOI MOSFET model continuous over all regions of operation is described. This model is valid for long and short channel fully depleted devices. In addition, the NQS nature of the charge redistribution is implicitly accounted for, without using any empirical partition of the channel charge. The physical and numerical foundation of our model is first described. In a second part, we propose a quantitative comparison between our modeling approach and two-dimensional device simulation. A circuit application is given in a third part. Finally, current memory cells (a circuit particularly sensible to charge injection) are simulated with this new model.