Multi-octave GaN MMIC amplifier

A broadband multi-octave, 0.1 - 20 GHz, 10 dB ±2 dB amplifier was implemented in the GaN/SiC technology. The amplifier design relies on a series DC/RF HEMTs (SHEMTS) configuration. This configuration offers an alternative to the traveling wave amplifier (TWA), uses a smaller chip area, and readily extends the gain to the low frequency region. The amplifier is power matched at Ku-band and has an output power of 1 W at 1-dB compression, 17 GHz, and 17% drain efficiency.