Study of Boron-Doped Silicon Carbide Thin Films

Prepared a-SiC thin films with plasma enhanced chemical vapor deposition (PECVD) at low temperature (135°C), by using CH₄, H₂, SiH₄ and B₂H₆. And with Raman spectroscopy, ellipsometry, absorption spectroscopy and other equipment to demonstrate the film characteristics such as structural characteristics, growth rate characteristics, band gap and refractive index spectra. The results show that we facbricate amorphous silicon carbide successfully under the condition of flow 80 sccm, RF power 24 w, working pressure 74 pa, substrate temperature 132°C.