Doping of Ta2O5 as a way to extend its potential for DRAM applications

The doping of Ta₂O₅ films with a proper element or its mixing with another high-k dielectric as a breakthrough to tailor Ta₂O₅ properties towards meeting the criteria for future technological nodes are discussed. Essential in the engineering of advanced DRAM storage capacitors parameters and characteristics of Ti-doped Ta₂O₅, Hf-doped Ta₂O₅ and mixed HfO₂-Ta₂O₅ layers as an illustration of both the benefits and the disadvantages of modified Ta₂O₅-based stacks are presented.