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Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration | IEEE Journals & Magazine | IEEE Xplore

Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration


Abstract:

This letter proposes a novel LNA design method where the complementary transistor topology is combined with asymmetrical inductive source degeneration to achieve matched ...Show More

Abstract:

This letter proposes a novel LNA design method where the complementary transistor topology is combined with asymmetrical inductive source degeneration to achieve matched input impedance over a wide bandwidth. A 2-10 GHz LNA is designed and fabricated using a commercial 0.18 RF-CMOS process to verify the feasibility of our proposed method. In the intended bandwidth, this LNA has matched input impedance, 20 dB power gain, and 2.4-3.4 dB noise figure, with 25.65 mW power consumption.
Published in: IEEE Microwave and Wireless Components Letters ( Volume: 20, Issue: 7, July 2010)
Page(s): 402 - 404
Date of Publication: 07 June 2010

ISSN Information:


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