Semi-physical nonlinear model for HEMTs with simple equations

A Nonlinear Circuit Model (NCM) combined with device/physical parameters was developed by using hyperbolic tangent (tanh) function and applied to GaN high electron mobility transistors (HEMTs). The equations for the NCM were constructed to reproduce the results of a device physical simulation. Model parameters are similar with the parameters used in the device design. The simulated DC and capacitance characteristics agree well with the measurement data over wide voltage range. Furthermore, numbers of the parameters were reduced to only 17 by using common physical parameters to both drain current and capacitance models.