The effects of a deep n-well junction on RF circuit performanc

This paper presents the effects of a deep n-well junction on RF circuit performance based on a 0.35um SiGe technology. With a combination of measurement and field solver results, it shows that the deep n-well yields about 20 dB of isolation and eliminates the inter-block noise coupled through the substrate in certain degree. The isolation varies with different junction voltage and at different frequency. The results of this paper offer a guideline for applying n-wells to realize a high isolation in high frequency IC design.