A 10-ns Low-Power 4K Static RAM with Cross-Coupled Thyristor Cells, Made in a Standard Oxide-Isolated Bipolar Process

Using a standard oxide-isolated bipolar process with 3 μm minimum design rules a very fast 4096×1 bit static RAM has been realized. This RAM is both ECL-10k and ECL-100k compatible. The power dissipation is low due to the use of low-stand-by-power-consuming cross-coupled thyristor cells and due to high performance circuitry including bit line switching.