High field-effect-mobility a-Si:H TFT based on high deposition-rate materials

Summary form only given. The hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with field-effect mobility (/spl mu//sub FE/) of 1.5 cm/sup 2//V/spl middot/s and threshold voltage (V/sub /spl tau//) of 1.9 V have been fabricated using the high deposition-rate plasma-enhanced chemical vapor deposited (PECVD) materials. To the best of our knowledge, this is the highest field-effect mobility ever reported for a-Si:H TFT made from high deposition-rate materials.