Optimization of the substrate parameters for EM-simulators

A technique for extraction and optimization of silicon substrate parameters is presented. The parameters are optimized to get the best fit between measured and simulated S-parameters for passive elements. Test structures were fabricated in a SiGe:C process with 5 metallization layers. The measurements were performed on-wafer. Loss and relative permittivity ¿_r of each insulation layer is extracted and optimized separately.