0.25 μm All Level e-Beam Pseudomorplhic AlGaAs/InGaAs MODFET with ft over 65 GHz

This contribution describes the fabrication of 0.25 μm gatelength MODFETs onl pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8 As material. An e-beam writer was employed in all lithographic levels. We have obtained a DC extrinsic transcoductance gm^≫4400≫ mS/mm. From mirowave measurement and the nodeled equivalent circuit ft ft and Fmax values of over 65 GHz and 110 GHz are obtained.