Effect of Velocity Saturation on Small Signal Behaviour of Submicron MOSFETs: Analytical Modelling and 2-D Simulations

In short channel MOSFETs the effect of carrier velocity saturation becomes increasingly important. This paper concentrates on its effect on the small signal behaviour. An analytical model, which is compared with 2D simulations for a wide frequency range and quasi-static measurements, shows an important influence on the If and hf behaviour.