Characterization of the Hot Carrier Related MOS Parameters Using Negative Feedback Circuits in VLSI CMOS

An external resistor in the collector circuit of the vertical bipolar transistor in CMOS was used to realize negative feedback into the MOST in the well. Using these feedback circuits a characterization technique for impact ionization related currents in VLSI CMOS was developed. The operating mode- and the operating point-dependent current gains and their influence on the measurable impact ionization current are discussed.