Ensemble Monte Carlo Simulation of a Pulse-Doped GaAs MESFET with a Doped-Layer of 100A

The highly degenerate two-dimensional electron gas confined in the pulse-doped GaAs MESFET with a doped-layer of 100A and the device characteristics have been studied for the first time by a self-consistent calculation of the Poisson's and Schrodinger's equations and using the ensemble Monte Carlo silmulation, respectively. It has been shown that the present results well agree with the experiments on the subband structures by Schubnikov-de Haas measurements, the electron density profile, the velocity-field characteristics and the current-voltage characteristics.