High-speed, high-quality WEB NPN transistors with phosphorus emitters

Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narrow, highly doped base can be formed.