A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM

A ferroelectric capacitor overdrive with shield-bitline drive for 1.3 V chain FeRAM has been verified using a 0.13 ¿m 576 Kb test chip with 0.719 ¿m² cell. This technique applies 0.24 V bias to ferroelectric capacitors without increasing stress and bitline capacitance. The measured tail-to-tail cell signal is improved by 100 mV and doubled in 1.3 V array operation.