Synthesis and characterization of semiconductive In2O3 hollow particles

A novel and facile synthesis route has been developed to prepare semiconductive In2O3 particles with hollow interiors and microporous shell structures. From the etching profile of XPS analysis, “implantation” of indium species into the polymeric templates occurs in C2Cl4 solvent, forming particles with a core-shell structure. Upon calcinations to 600°C, polycrystalline In2O3 hollow particles with a narrow particle-size distribution and a non-aggregating character are formed. Specific surface area and pore structure on the shells of the hollow particles can be tailored to a significant extent by changing process variables such as precursor concentration. Structure and electric properties of the In2O3 hollow particles are examined by TEM/SEM, BET, UV-vis., and FT-IR.