Integration of single crystal Si TFTs and circuits on a large glass substrate

Submicron single crystal-Si TFTs and a test circuit are integrated on a 320 mm × 400 mm ( Gen 1 ) glass substrate for the first time, by transferring devices using hydrogen exfoliation and direct bonding without adhesive. Characteristics of the NMOS-TFT is comparable with that of SOI, while PMOS-TFT shows some degradation of sub-threshold swing. Transferred CMOS show high performance and shift register function at 400 MHz (clock frequency) with power supply of 3 V. Transferred die size was 15 mm × 15 mm.