Analog and RF design issues in high-k & multi-gate CMOS technologies

High-k, metal gate devices and furthermore multi-gate FETs (MuGFETs) are considered as promising solution for scaling down to 32 nm, 22 nm and 16 nm overcoming the limitations of conventional planar bulk. Especially analog, mixed-signal and RF device and circuit performance is affected by these revolutionary changes in technology. This paper discusses different examples for novel, technology related design issues focused on analog, mixed-signal and RF applications.