CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack

Ge/Si core/shell gate-all-round nanowire pMOSFET integrated with HfO₂/TaN gate stack is demonstrated using fully CMOS compatible process. Devices with 100 nm gate length achieved high I_ON of ~946 ¿A/¿m at V_G - V_T = -0.7 V and V_DS = -1 V and on/off ratio of 10⁴ with decent subthreshold behavior. Significant improvement in hole mobility and ballistic efficiency is demonstrated as a result of core/shell channel architecture.