Statistical enhancement of combined simulations of RDD and LER variability: What can simulation of a 105 sample teach us?

Using 3D simulations of statistical ensembles of unprecedented size, we have studied statistical threshold voltage variations induced by the combined effects of random dopants and line edge roughness in a state of the art 35 nm MOSFET. Statistical samples of 10⁵ microscopically different transistors have been simulated. Based on careful statistical analysis of the simulation results we have developed statistical enhancement techniques, which deliver a high degree of statistical accuracy at a greatly reduced computational cost.