Dots-in-a-well ingaas based laser probed by photoreflectance-anisotropy spectroscopy

We have used photoreflectance-anisotropy (PRA) spectroscopy as an optical probe for the characterization of heterostructure lasers with an active region consisting of InAs quantum dots (QDs) embedded in a series of three stacked In0.15Ga0.85As quantum wells (QWs). By probing the in-plane optical anisotropy, we demonstrate that PRA spectroscopy has the ability to detect and differentiate layers with quantum dimensions, as the anisotropy PRA signal stems from QWs and QDs. We show that PRA spectroscopy can be an attractive tool for the characterization of buried interfaces in nanostructured devices at room temperature.