Travelling wave simulation of diode charge storage effect

Linvill's (1958) physical diode model has been generalized to include the travelling wave component of the dynamic Poisson's equation left out in the classical formulation of semiconductor device equations. The generalized physical diode model contains three lumped circuit approximations of the P-line, N-line, and the potential-line for simulating respectively, the hole and electron diffusion and recombination processes and the time-varying electrostatic potential inside the diode. All model elements are basic circuit elements defined in SPICE-like circuit simulators. The diode recovery phenomenon is simulated using the generalized physical diode model and the simulation accuracy had been verified by using a mixed-level circuit and device simulator.