An experimental study of TiN gate FinFET SRAM with (111)-oriented sidewall channels

TiN gate FinFET SRAM half-cells with different ß-ratios from 1-3 have successfully been fabricated by using the orientation dependent wet etching and conventional reactive sputtering, for the first time. It is experimentally found that static noise margin (SNM)at read condition increases with increasing ß-ratio due to the strength of pull-down transistor. To overcome SRAM cell size increment with increasing ß, a fin-height controlled pass-gate (PG) SRAM structure is proposed.